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IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800
Vorlaufige Daten / Preliminary Data
Wesentliche Merkmale * Infrarot LED mit hoher Ausgangsleistung * Anode galvanisch mit dem Gehauseboden verbunden * Emissionswellenlange typ. 850 nm * Sehr hohe Strahldichte * Anwendungsklasse nach DIN 40 040 GQG Anwendungen * Sensorik * Lichtgitter Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Features * * * * * High Power Infrared LED Anode is electrically connected to the case Peak wavelength typ. 850 nm Very high radiance DIN humidity category in acc. with DIN 40 040 GQG
Applications * Sensor technology * Light curtains Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Typ Type SFH 4850 E7800
1)
Bestellnummer Ordering Code Q65110A2093
Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) 4 (typ. 7)
gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
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SFH 4850 E7800
Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Warmewiderstand Sperrschicht - Gehause Thermal resistance junction - case Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Symbol Symbol peak Wert Value 850 Einheit Unit nm Symbol Symbol Wert Value - 40 ... + 80 5 200 1 470 450 160 Einheit Unit C V mA A mW K/W K/W
Top , Tstg VR IF IFSM Ptot RthJA RthJC
35
nm
23 0.09 0.3 x 0.3 12
Grad deg. mm2 mm ns
A LxB LxW tr , tf
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SFH 4850 E7800
Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Symbol Symbol Wert Value Einheit Unit
VF VF IR
1.5 (< 1.8) 2.4 (< 3.0)
V V
not designed for A reverse operation 50 mW
e typ
Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA
- 0.5
%/K
TCV TC
- 0.7 + 0.2
mV/K nm/K
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SFH 4850 E7800
Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s
1)
Symbol
Werte Values SFH 4850 E7800 -P SFH 4850 E7800 -Q 6.3 12.5 55 4 8 45
Einheit Unit mW/sr mW/sr mW/sr
Ie min Ie max Ie typ
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 1.1 mm; Abstand Lochblende zu Gehauseruckseite: 4,0 mm). Dadurch wird sichergestellt, dass bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses der Anwendung entsprechende Messverfahren ergibt sich fur die Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist.
1)
Only one group in one packing unit, (variation lower 2:1) An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4.0 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by 'E 7800' added to the type designation.
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SFH 4850 E7800
Relative Spectral Emission Irel = f ()
100 %
OHL01714
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHL01715
Single pulse, tp = 20 s
101
Max. Permissible Forward Current IF = f (TA)
250
OHF02644
Ie I e (100 mA)
I F mA
200
I rel 80
100 5
RthJC = 160 K/W
150
60
10-1
40
5
100
10
20
-2
RthJA = 450 K/W
5
50
0 700
750
800
850
nm 950
10-3 0 10
5 10 1
5 10 2
mA 10 3
IF
0
0
20
40
60
80 C 100
Forward Current IF = f (VF) Single pulse, tp = 20 s
Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter
OHL01713
T
IF
10 A
0
IF
104 mA
OHF02645
D = TP
t
tP
IF T
10 -1 5
D=
103 0.1 0.2 0.005 0.01 0.02 0.05
10 -2 5
0.5 102 1
10 -3 5
10 -4
0
0.5
1
1.5
2
2.5 V 3
VF
101 -5 10 10-4 10-3 10-2 10-1 100 101 s 102
tp
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SFH 4850 E7800
Mazeichnung Package Outlines
2.7 (0.106) o0.45 (0.018)
Chip position
o4.3 (0.169)
o4.1 (0.161)
3) .04 5) (0 3 .1 (0.0 1 0.9 0.9 1.1 (0 (0 .04
2.54 (0.100) spacing
1 2 14.5 (0.571) 12.5 (0.492)
.03
5)
3)
o5.5 (0.217) o5.2 (0.205)
GETY6625
3.6 (0.142) 3.0 (0.118)
Mae in mm (inch) / Dimensions in mm (inch).
Gehause / Package
18 A3 DIN 41870 (TO-18), Bodenplatte, klares Epoxy-Gieharz, Anschlusse im 2.54-mm-Raster (1/10") 18 A3 DIN 41870 (TO-18), clear epoxy resin, lead spacing 2.54-mm(1/10") 1 = Kathode / cathode 2 = Anode / anode
Anschlussbelegung Pin configuration
Abstrahlcharakteristik Radiation Characteristics Irel = f ()
40 30 20
10
0 1.0
OHR01457
50 0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
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SFH 4850 E7800
Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
10 s
Normalkurve standard curve Grenzkurven limit curves
0 0 50 100 150 t 200 s 250
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
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